
VGOL Pack of 50 AO3400 A09T 5.7A 30V N-Channel P-Channel Enrichment Mode Field Effect Transistor Compatible with MOSFET SMD Transistor AO3400 SOT-23
VGOL Pack of 50 AO3400 A09T 5.7A 30V N-Channel P-Channel Enrichment Mode Field Effect Transistor Compatible with MOSFET SMD Transistor AO3400 SOT-23
VGOL Pack of 50 AO3400 A09T 5.7A 30V N-Channel P-Channel Enrichment Mode Field Effect Transistor Compatible with MOSFET SMD Transistor AO3400 SOT-23
Product Features
- Application : Typically used in high frequency applications such as RF amplification, signal processing and energy management applications.
- Packaging: Secured in an anti-static bag that provides electrostatic protection, ESD safety and a longer shelf life.
- Specification : N-channel transistor. Voltage: 30V and current: 5.7A, minimum temperature -55C, maximum temperature 150C 30C.
- Note: If the device is exposed to the absolute maximum values for extended periods of time, this may affect reliability.
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VGOL Pack of 50 AO3400 A09T 5.7A 30V N-Channel P-Channel Enrichment Mode Field Effect Transistor Compatible with MOSFET SMD Transistor AO3400 SOT-23
VGOL Pack of 50 AO3400 A09T 5.7A 30V N-Channel P-Channel Enrichment Mode Field Effect Transistor Compatible with MOSFET SMD Transistor AO3400 SOT-23
Product Features
- Application : Typically used in high frequency applications such as RF amplification, signal processing and energy management applications.
- Packaging: Secured in an anti-static bag that provides electrostatic protection, ESD safety and a longer shelf life.
- Specification : N-channel transistor. Voltage: 30V and current: 5.7A, minimum temperature -55C, maximum temperature 150C 30C.
- Note: If the device is exposed to the absolute maximum values for extended periods of time, this may affect reliability.
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Product Information
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Description
VGOL Pack of 50 AO3400 A09T 5.7A 30V N-Channel P-Channel Enrichment Mode Field Effect Transistor Compatible with MOSFET SMD Transistor AO3400 SOT-23
Product Features
- Application : Typically used in high frequency applications such as RF amplification, signal processing and energy management applications.
- Packaging: Secured in an anti-static bag that provides electrostatic protection, ESD safety and a longer shelf life.
- Specification : N-channel transistor. Voltage: 30V and current: 5.7A, minimum temperature -55C, maximum temperature 150C 30C.
- Note: If the device is exposed to the absolute maximum values for extended periods of time, this may affect reliability.




















