
ECSiNG 20pcs TO220AB IRF9530N Transistor 100V 12A 88W for Analog and Digital Circuits
ECSiNG 20pcs TO220AB IRF9530N Transistor 100V 12A 88W for Analog and Digital Circuits
Product Features
- Product parameters : TO-220AB housing, power consumption (maximum): 88 W (Tc), operating temperature: -55 C to 175 C (TJ), input capacity (Ciss) (maximum) Vds 860 pF at 25 V, drain source voltage (Vdss): 100 V, continuous drain current (Id) at 25 C : 12 A (Tc), gate charge (Qg) (maximum) at Vgs, 38 nC at 10 V.
- Applicability: This MOSFET field effect transistor is suitable for analogue and digital circuits, etc.
- Easy to install: direct replacement without adjustment, perfect compatibility and high reliability.
- Product material: This product is specially designed and made of metal material, with a long service life and not easy to damage.
- Product list: The product includes a total of 20 transistors that can fully meet your daily use and replacement needs.
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ECSiNG 20pcs TO220AB IRF9530N Transistor 100V 12A 88W for Analog and Digital Circuits
ECSiNG 20pcs TO220AB IRF9530N Transistor 100V 12A 88W for Analog and Digital Circuits
Product Features
- Product parameters : TO-220AB housing, power consumption (maximum): 88 W (Tc), operating temperature: -55 C to 175 C (TJ), input capacity (Ciss) (maximum) Vds 860 pF at 25 V, drain source voltage (Vdss): 100 V, continuous drain current (Id) at 25 C : 12 A (Tc), gate charge (Qg) (maximum) at Vgs, 38 nC at 10 V.
- Applicability: This MOSFET field effect transistor is suitable for analogue and digital circuits, etc.
- Easy to install: direct replacement without adjustment, perfect compatibility and high reliability.
- Product material: This product is specially designed and made of metal material, with a long service life and not easy to damage.
- Product list: The product includes a total of 20 transistors that can fully meet your daily use and replacement needs.
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Product Information
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Description
ECSiNG 20pcs TO220AB IRF9530N Transistor 100V 12A 88W for Analog and Digital Circuits
Product Features
- Product parameters : TO-220AB housing, power consumption (maximum): 88 W (Tc), operating temperature: -55 C to 175 C (TJ), input capacity (Ciss) (maximum) Vds 860 pF at 25 V, drain source voltage (Vdss): 100 V, continuous drain current (Id) at 25 C : 12 A (Tc), gate charge (Qg) (maximum) at Vgs, 38 nC at 10 V.
- Applicability: This MOSFET field effect transistor is suitable for analogue and digital circuits, etc.
- Easy to install: direct replacement without adjustment, perfect compatibility and high reliability.
- Product material: This product is specially designed and made of metal material, with a long service life and not easy to damage.
- Product list: The product includes a total of 20 transistors that can fully meet your daily use and replacement needs.




















