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DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC
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DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC

DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC

DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC

Product description: Use the fifth generation HEXFETs from International Rectifier. Advanced processing techniques to achieve extremely low resistance per silicon surface. This advantage, combined with the fast switching speed and robust device design, provides HEXFET Power, 175°C operating temperature. MOSFETs are known for providing the designer with an extremely efficient and reliable component for use in a variety of applications. The TO-247 is similar but superior to the earlier TO-218 case due to its insulated mounting hole. Specification: Colour: as shown in the picture. VDSS = 200 V. RDS(on) = 0.04Ω. ID = 50A. Packing list: 6 x transistors

Product Features

  • Use the fifth generation HEXFETs from International Rectifier.
  • Advanced processing techniques to achieve extremely low resistance per silicon surface.
  • This advantage, combined with the fast switching speed and robust device design, provides HEXFET Power, 175C operating temperature.
  • MOSFETs are known for providing the designer with an extremely efficient and reliable component for use in a variety of applications.
  • The TO-247 is similar but superior to the earlier TO-218 case due to its insulated mounting hole.
$33.72

Original: $96.34

-65%
DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC

$96.34

$33.72

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DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC - Image 3
DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC - Image 4
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DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC - Image 6
DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC - Image 7

DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC

DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC

Product description: Use the fifth generation HEXFETs from International Rectifier. Advanced processing techniques to achieve extremely low resistance per silicon surface. This advantage, combined with the fast switching speed and robust device design, provides HEXFET Power, 175°C operating temperature. MOSFETs are known for providing the designer with an extremely efficient and reliable component for use in a variety of applications. The TO-247 is similar but superior to the earlier TO-218 case due to its insulated mounting hole. Specification: Colour: as shown in the picture. VDSS = 200 V. RDS(on) = 0.04Ω. ID = 50A. Packing list: 6 x transistors

Product Features

  • Use the fifth generation HEXFETs from International Rectifier.
  • Advanced processing techniques to achieve extremely low resistance per silicon surface.
  • This advantage, combined with the fast switching speed and robust device design, provides HEXFET Power, 175C operating temperature.
  • MOSFETs are known for providing the designer with an extremely efficient and reliable component for use in a variety of applications.
  • The TO-247 is similar but superior to the earlier TO-218 case due to its insulated mounting hole.

Product Information

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Description

DollaTek 6pcs IRFP260N N-Channel MOSFET Transistor 50A 200V TO-247AC

Product description: Use the fifth generation HEXFETs from International Rectifier. Advanced processing techniques to achieve extremely low resistance per silicon surface. This advantage, combined with the fast switching speed and robust device design, provides HEXFET Power, 175°C operating temperature. MOSFETs are known for providing the designer with an extremely efficient and reliable component for use in a variety of applications. The TO-247 is similar but superior to the earlier TO-218 case due to its insulated mounting hole. Specification: Colour: as shown in the picture. VDSS = 200 V. RDS(on) = 0.04Ω. ID = 50A. Packing list: 6 x transistors

Product Features

  • Use the fifth generation HEXFETs from International Rectifier.
  • Advanced processing techniques to achieve extremely low resistance per silicon surface.
  • This advantage, combined with the fast switching speed and robust device design, provides HEXFET Power, 175C operating temperature.
  • MOSFETs are known for providing the designer with an extremely efficient and reliable component for use in a variety of applications.
  • The TO-247 is similar but superior to the earlier TO-218 case due to its insulated mounting hole.
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