BOJACK IRFP260 MOSFET Transistors IRFP260N 50A 200V N-Channel Power MOSFET IRFP260NPBF TO-247AC (Pack of 5)
BOJACK IRFP260 MOSFET Transistors IRFP260N 50A 200V N-Channel Power MOSFET IRFP260NPBF TO-247AC (Pack of 5)
BOJACK IRFP260 MOSFET Transistors IRFP260N 50A 200V N-Channel Power MOSFET IRFP260NPBF TO-247AC (Pack of 5)
BOJACK IRFP260N MOSFET is a field effect transistor, which can be widely used in analogue and digital circuits. Basic parameters: IRFP260N is in a TO-247AC package Available on resistor Rds (on): 0.04 ohm Voltage Vgs highest: ± 20 V. Number of stitches: 3. Operating temperature: -55 °C to 175 °C. Thermal resistance connection to case A: 2.0 °C / W. Voltage Vds typical: 200 V. Current ID continuous: 50A. Current Idm pulse: 200A. Surface-mounted device: through hole mounting. Lead-free environmental protection
Product Features
- Transistor type: MOSFET
- Transistor polarity: N-channel
- Drain current (Id Max): 50 A
- Voltage Vds max: 200 V
- Power (max. ): 300 W
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BOJACK IRFP260 MOSFET Transistors IRFP260N 50A 200V N-Channel Power MOSFET IRFP260NPBF TO-247AC (Pack of 5)
BOJACK IRFP260 MOSFET Transistors IRFP260N 50A 200V N-Channel Power MOSFET IRFP260NPBF TO-247AC (Pack of 5)
BOJACK IRFP260N MOSFET is a field effect transistor, which can be widely used in analogue and digital circuits. Basic parameters: IRFP260N is in a TO-247AC package Available on resistor Rds (on): 0.04 ohm Voltage Vgs highest: ± 20 V. Number of stitches: 3. Operating temperature: -55 °C to 175 °C. Thermal resistance connection to case A: 2.0 °C / W. Voltage Vds typical: 200 V. Current ID continuous: 50A. Current Idm pulse: 200A. Surface-mounted device: through hole mounting. Lead-free environmental protection
Product Features
- Transistor type: MOSFET
- Transistor polarity: N-channel
- Drain current (Id Max): 50 A
- Voltage Vds max: 200 V
- Power (max. ): 300 W
Product Information
Product Information
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Description
BOJACK IRFP260 MOSFET Transistors IRFP260N 50A 200V N-Channel Power MOSFET IRFP260NPBF TO-247AC (Pack of 5)
BOJACK IRFP260N MOSFET is a field effect transistor, which can be widely used in analogue and digital circuits. Basic parameters: IRFP260N is in a TO-247AC package Available on resistor Rds (on): 0.04 ohm Voltage Vgs highest: ± 20 V. Number of stitches: 3. Operating temperature: -55 °C to 175 °C. Thermal resistance connection to case A: 2.0 °C / W. Voltage Vds typical: 200 V. Current ID continuous: 50A. Current Idm pulse: 200A. Surface-mounted device: through hole mounting. Lead-free environmental protection
Product Features
- Transistor type: MOSFET
- Transistor polarity: N-channel
- Drain current (Id Max): 50 A
- Voltage Vds max: 200 V
- Power (max. ): 300 W
